功率因数高，功率因数始终大于0.98，无功损耗小，此部分比可控硅中频电

功率因数高，功率因数始终大于0.98，无功损耗小，此部分比可控硅中频电源节能3%-5%。由于节能型IGBT晶体管中频电源采用了半可控整流方式，整流部分不调可控硅导通角，所以整个工作过程功率因数始终大于0.98，无功率损耗小。

結果 (英文) 1:

High power factor, power factor is always greater than 0.98, reactive power loss is small, this part of 3% than other thyristor medium-frequency power supply-5%. Due to the energy-saving type IGBT transistors using half controlled rectifier intermediate frequency power supply, not adjustable rectifier part SCR conduction angle, so the whole process is always greater than 0.98 power factor, no loss of power.

結果 (英文) 2:

High power factor, power factor of greater than 0.98, low reactive power loss, this part of the SCR frequency power saving than 3% -5%. Since the energy-frequency power supply using IGBT transistors half controlled rectifier, thyristor rectifier conduction angle is not adjusted, so the entire work process is always greater than 0.98 power factor, small non-power loss.

結果 (英文) 3:

High power factor, power factor is greater than 0.98, the reactive power loss is small, this part than the thyristor medium frequency power supply energy saving 3%-5%. The energy-saving IGBT transistor if supply is the half controlled rectifier, rectifier is not adjustable thyristor conduction angle, so the whole working process of power factor is greater than 0.98, no small power loss.