MoSi2 thin films deposited on the a

MoSi2 thin films deposited on the alumina substrate had a hexagonal crystal structure, contrary to the tetragonal Fig. 1. Schematic drawing of apparatus for thin film deposition by RF magnetron sputtering.one of the target material, under all conditions. However,the orientation changed greatly with the sputtering conditions.It was found that sputtering conditions strongly affected the deposited MoSi2 thin film. The XRD patterns are shown in Fig. 2. The compositions were close to Mo:Si=1:2, which is the stoichiometric composition ratio,under all conditions. Furthermore, it has been reported that when a thin film is deposited by sputtering using Ar gas, it often has the so-called column structure, where all the crystals inside the thin film are arrayed in columns on the substrate [3, 4]. It was confirmed from SEM images that the MoSi2 thin films deposited on the alumina substrate also had the column structure.

結果 (中文) 1:

MoSi2薄膜沉积在氧化铝基板具有六方晶系的晶体结构，相反，四方图1。用于薄膜沉积由射频磁控sputtering.one靶材料的装置示意图，在各种条件下。然而，方向发生了很大的溅射条件。结果发现，溅射条件强烈影响MoSi2薄膜沉积。XRD结果如图2所示。成分接近钼：SI = 1:2，这是化学计量比组成，在所有条件下。此外，据报道，当薄膜通过溅射用Ar气的沉积，它往往有所谓的柱状结构，在薄膜内部的晶体排列在列在基板上的[ 3，4 ]。它是从SEM图像，MoSi2薄膜沉积在氧化铝基板也有柱的结构确认。

結果 (中文) 2:

MoSi2 薄膜氧化铝衬底上沉积了六角形晶体结构，与四方的图 1。示意图器具的薄膜沉积的 RF 磁控 sputtering.one 的目标材料，在所有条件下。然而，方向与溅射条件变化很大。它被发现强烈溅射条件影响沉积的 MoSi2 薄膜。XRD 模式图 2 所示。作文已经接近 Mo:Si = 1： 2，是化学计量学组成的比率，在所有条件下。此外，据报当薄膜溅射使用 Ar 气体，它常常有所谓列结构，在薄膜内的所有晶体都排列在列 [3，4] 的基板上。它从扫描电镜图像证实氧化铝衬底上沉积的 MoSi2 薄膜也有列结构。