A brief power supply disruption at

A brief power supply disruption at Samsung Electronics' latest NAND flash chip-producing facilities will benefit its rival SK hynix and Samsung Electronics, market research firms said Monday.

CLSA, one of leading market research firms, said in a note that it expects the power struggle at Samsung's Xian plant to fuel additional momentum on the supply side as the price of DRAM and NAND flash chips were seeing a sign of upturn.

Samsung Electronics said early Monday that its Xian plan, which is designated to manufacture profitable three-dimensional (3D) vertical (V)-NAND chips was disrupted by a brief power outage on June 18.

Samsung Electronics later said a full normalization will take a few days with the firm stressing that the power outage will have "minimal impact" on the market.

Despite the production shortfall following the Xian fire, improved DRAM pricing and increased NAND flash chips have enabled Samsung to post another record operating margin in the second quarter of this year, higher than consensus, said local market analysts.

CLSA said the disruption will tighten supply in NAND chips ― the components to be used in all digital devices ― in the latter half. The research firm said this situation will help NAND chips see price rise, both of Samsung and SK hynix will be benefited in the mid-term.

"The one-time incident will cost Samsung up to 20 billion won, which is very minimal. It won't make heavy impact on Samsung's chip business and the entire industry," said a local fund manager by telephone. He said his team bought more Samsung Electronics stocks on the Seoul bourse after the incident.

Mirae Asset Securities said its view on Samsung won't be changed because of the disruption of the plant.

Shares of Samsung Electronics rose by 0.35 percent to end at 1,431,000 won on the Seoul bourse, while SK hynix added 3.62 percent to end at 30,050 won, according to the data from the Korea Exchange (KRX).

The chips have helped Samsung assume a dominant position in higher-margin products such as solid-state hard drives for computers and servers. The company expects less than 10,000 wafers to be affected by the disruption.

結果 (繁體中文) 1:

短暫的電力供應中斷在三星電子最新 NAND 快閃記憶體晶片生產設施將惠及其競爭對手的 SK 海力士和三星電子，週一說，市場研究公司。里昂證券，領先的市場研究公司之一表示它預計的權力鬥爭，在三星的西安植物對燃油附加動量在供應方面作為 DRAM 的價格和 NAND 快閃記憶體晶片被看到好轉的跡象。三星電子錶示，週一早上，其西安計畫，這指定制造有利可圖的三維 (3D) 垂直 (V)-6 月 18 日 NAND 晶片受到短暫停電。三星電子以後說全面正常化將採取堅定強調幾天停電將在市場上有"最小的影響"。當地市場分析師表示，儘管產量不足西安發生大火後，改進 DRAM 價格和增加的 NAND 快閃記憶體晶片已啟用三星發佈另一條記錄，在這一年，高於協商一致，第二季營業獲利率。里昂證券表示，中斷將收緊供應在 NAND 晶片 ― ― 要在所有數位設備 ― ― 在後半部分中使用的元件。研究公司表示，這種情況將有助於看到價格上漲，兩個三星的 NAND 晶片和 SK 海力士將在中期中受益。"一次性事件將成本三星達 200 億韓元，是極少。當地的基金經理通過電話表示 ︰ 它不會讓對三星的晶片業務和整個行業，重影響"。他說他的團隊買更多的三星電子在首爾交易所上市的股票，事件發生後。Mirae 資產證券說其對三星的看法不會改變由於植物的中斷。三星電子股價上漲 0.35%，收報 1,431,000 韓元在首爾交易所上市，而 SK 海力士添加 3.62%，收報 30,050 韓元，根據資料從韓國交易所 (KRX)。晶片，説明三星假設在固態硬碟的電腦和伺服器等獲利率較高產品的主導地位。該公司預計少於 10000 片晶圓會受到破壞。

結果 (繁體中文) 2:

三星電子最新的NAND閃存芯片生產設施的簡要電力供應中斷將有利於它的競爭對手SK海力士和三星電子，市場研究公司週一稱，里昂證券，領先的市場研究公司之一，在一份報告中稱，預計電力在三星西安工廠鬥爭燃油附加勢頭在供應方面由於DRAM和NAND閃存芯片的價格正在看到好轉的跡象。三星電子週一早些時候表示，其西安的計劃，這是定點生產有利可圖的三維（3D ）垂直（V）-NAND芯片是由6月18日短暫停電打亂了三星電子後來說，一個完整的正常化將需要幾天的時間與該公司強調，停電將對市場上“最小的影響。” 儘管產量下降後的西安消防，提高了DRAM價格和增加的NAND閃存芯片已經啟用三星發布今年第二季度再創歷史新高的運營利潤率，比預測高說，當地市場分析，里昂證券表示，中斷將收緊供應NAND芯片-組件在所有設備上使用-在後半段。該研究公司表示，這種情況將有助於NAND芯片看到價格上漲，三星和SK海力士將受益於中期。“一次性事件將耗資三星高達20十億億韓元，這是很小的，它不會對三星的芯片業務和整個行業的嚴重影響，“在電話中說當地的基金經理。他說，他的團隊在事件發生後買了首爾股市更三星電子的股票。未來資產證券稱，其在三星認為不會，因為植物的破壞而改變。三星電子的股價上漲0.35％，至1431000結束贏得了首爾股市，而SK海力士增加3.62％，至結束時30050韓元，據韓國交易所（KRX）中的數據。該芯片已經幫助三星承擔利潤率較高的產品，如固態硬盤的主導地位驅動器的計算機和服務器。該公司預計，受干擾的影響小於10,000片晶圓。