However,the pressure increased agai

However,the pressure increased again at a high temperature of about 900 °C, and the resistance of the heater decreased markedly.It was speculated that the decrease of resistance was caused by the reaction between MoSi2 thin film and Pt, whereby platinum silicide (PtSi) was generated. Because no peculiar phenomena such as a decrease in resistance were observed on repetition of heating to 1000 °C, heating was repeated to 1300 °C. This R–T characteristic is shown in Fig. 4. As in the first process of heating to 1000 °C, the resistance decreased rapidly at approximately 1000 °C in the first process of heating up to 1300 °C.

結果 (中文) 1:

然而，压力在高的温度约900°C再次增加，和加热器的电阻显着下降。推测减少阻力是由MoSi2薄膜和Pt之间的反应引起的，由此产生了硅化铂（铂）。因为没有如在加热到1000°C重复观察到减少阻力的奇特现象，加热是重复1300°C. R–T特性如图4所示。在加热过程中首先要1000°C，电阻迅速下降，在约1000°C在加热至1300°C.第一过程

結果 (中文) 2:

然而，压力再增加约 900 ° c，温度高和加热器的阻力明显下降。它被推测电阻减少造成的 MoSi2 薄膜与 Pt，藉以生成铂硅化物 (PtSi) 的反应。因为没有奇特的现象，如减少阻力观察到对重复加热到 1000 ° C，加热被重覆到 1300 ° c。这个 R–T 特征如图 4 所示。在加热到 1000 ° C 的第一个过程中，抵抗下跌迅速在大约 1000 ° C 在第一个进程的加热达 1300 ° c。