Mo is 5.0 × 10-3 °C and that of MoS

Mo is 5.0 × 10-3 °C and that of MoSi2 is 7.489 × 10-4 °C ,
as calculated from Fig. 4, it is speculated that the ratio of
Mo in the MoSi2 thin film increased owing to the separation
of Si from MoSi2 as the heating was repeated. Consequently, the temperature coefficient of the heater increased.
To explain the cause, the composition of the MoSi2 thin film
with the Mo buffer layer was analyzed by EDX. Table 2

結果 (中文) 1:

Mo 5×10-3°C，MoSi2是7.489×10-4°C，
从图4计算，推测
Mo在MoSi2薄膜的比例增加，由于Si的分离
从MoSi2作为加热重复。因此，加热器的温度系数的增加。
解释的原因，
MoSi2薄膜组成随着钼缓冲层是由EDX分析。表2

結果 (中文) 2:

Mo 是 5.0 × 10-3 ° C，即 MoSi2 7.489 × 10-4 ° C，
作为计算从图 4，它被推测那的比率
在薄膜，由于分离增加 MoSi2 Mo
从作为加热 MoSi2 Si 的重复了。因此，加热器温度系数增加.
解释的原因，组成的 MoSi2 薄膜
与 Mo 缓冲层是通过 EDX 进行分析。表 2