在半導體產業中，應用在二氧化矽及氮化矽的電漿蝕刻（plasma etc

在半導體產業中，應用在二氧化矽及氮化矽的電漿蝕刻（plasma etching）中。也是一種製冷劑，名稱為R-23或HFC-23，因為其不含氯，不會造成臭氧層破洞，有時會用來會取代造成臭氧層破洞的三氟氯甲烷（cfc-13）。

結果 (英文) 1:

In the semiconductor industry, silicon dioxide and silicon nitride in the application of plasma etching (plasma etching) in. Also a refrigerant, R-23 is a name or HFC-23, since it contains no chlorine, will not cause the ozone hole, may be used to replace the ozone hole caused trifluorochloromethane (cfc-13).

結果 (英文) 2:

In the semiconductor industry, it is used in plasma etching (plasma etching) of silica and silica. It is also a refrigerant, named R-23 or HFC-23, because it is chlorine-free and does not cause holes in the ozone layer, sometimes used to replace the trifluorochloromethane (cfc-13) that causes the hole in the ozone layer.

結果 (英文) 3:

In the semiconductor industry, it is used in the plasma etching of silicon dioxide and silicon nitride. It is also a refrigerant, named R-23 or HFC-23, because it does not contain chlorine and will not cause the ozone layer to break, sometimes it will be used to replace the trifluoromethane (cfc-13) which will cause the ozone layer to break.