Plasma etching is an indispensable

Plasma etching is an indispensable technique for patterning
thin films in the fabrication of very-large-scale integrated
~VLSI! circuit devices. As the manufacture of VLSI moves
towards less than the subquarter micron design rule, the requirements
for etching are increasingly difficult to meet using
conventional rf plasma sources. Alternative to these
plasma sources are low-pressure, high-density plasma
sources, e.g., electron cyclotron resonance ~ECR! plasma,
inductively/transformer coupled plasma ~ICP/TCP!, helical
resonators and helicon plasma sources. Such plasma sources
can generate higher density plasma with a lower operating
gas pressure and a lower sheath voltage, compared to conventional
rf plasma, and are expected to achieve a betteretched
profile with higher selectivity.

結果 (中文) 1:

等离子体刻蚀是一种不可或缺的技术，用于阵列在制造中规模非常大的薄膜集成~ VLSI ！电路器件。随着超大规模集成电路的制造对 subquarter 微米设计规则，要求小于蚀刻是越来越难满足使用传统的射频等离子体源。这些替代方法等离子体源是低压、 高密度等离子体例如，源电子回旋共振 ~ ECR ！等离子体，电感和变压器耦合等离子体 ~ICP/TCP!、 螺旋谐振器和螺旋波等离子体源。这种等离子体源可以产生更高的密度等离子体以较低的经营气体压力和较低的鞘层电压，相比传统射频等离子体，预期将实现 betteretched具有更高选择性的配置文件。

結果 (中文) 3:

等离子体刻蚀是不可缺少的技术图案化
薄膜在制造超大规模集成电路
~！电路装置。随着超大规模集成电路的移动对小于
subquarter微米设计规则制造，蚀刻要求
是满足常规的射频等离子体源使用
越来越难。替代这些
等离子体源是低压，高密度等离子体
来源，例如，电子回旋共振~ ECR！
等离子体，电感/变压器耦合等离子体ICP／TCP ~！
，螺旋谐振器和螺旋波等离子体源。这样的等离子体源可以产生较低的操作

气体压力和下鞘层电压更高密度的等离子体，比常规
射频等离子体，并有望实现betteretched
高选择性分布。