The feedthrough of the input drivin

The feedthrough of the input driving signal is caused by the gate–drain capacitance; this capacitance is not included in the analysis of this paper. The gate–drain capacitance is nonlinear and dependent on the gate–drain voltage [27]; it can, therefore, affect the amplifier performance like the nonlinear output capacitance. The gate–drain capacitance is usually low when compared to the transistor output capacitance; the gate–drain capacitance of the LDMOS transistor MRF21010, for example, is about 1 pF. In some cases, the effects of the gate–drain capacitance can be neglected; on the other hand, because the driving power of the class-E switch-mode amplifier is usually high, the feedthrough is comparatively stronger than the desired output power at low drain voltage. The feedthrough strongly affects the
linearity of the dc supply modulation of the class-E amplifier and must be taken into consideration for low power operation mode. From the simulation results and the following measured results, though, the feedthrough can be neglected for moderate output power. The drain efficiency degradation in this range is mainly caused by the transistor output capacitance; the effects of the gate–drain capacitance are, therefore, not included. For
precise analysis, especially at the very low drain voltage, thegate–drain capacitance cannot be neglected, as shown in the simulations and measurements of this experiment.

結果 (中文) 2:

输入驱动信号的穿通线是由栅-漏电容引起的; 这个电容不包括在本文的分析。栅极-漏极电容的非线性和依赖于栅极-漏极电压[27]; 它可以，因此，影响像非线性输出电容放大器器的性能。时相比，晶体管的输出电容的栅极-漏极电容，通常是低的; LDMOS晶体管MRF21010的栅极-漏极电容，例如是大约1pF。在一些情况下，栅极-漏极电容的影响可以忽略不计; 另一方面，由于E类开关模式放大器呃的驱动力通常为高，则穿通线是相对比所希望的输出功率，在低漏极电压更强。馈通强烈影响
的E类放大器呃的直流电源调制的线性度，并且必须考虑为低功耗操作模式。从模拟结果和下面的测量结果，但是，馈通可忽略不计为中等输出功率。在此范围内的漏极英法fi效率退化的主要原因是由晶体管的输出电容; 正，因此，不包括在栅-漏电容的影响。为
精确的分析，特别是在非常低的漏极电压，thegate -漏电容不能被忽略，如本实验的模拟和测量。

結果 (中文) 3:

的输入驱动信号的馈通由栅漏电容引起的电容–；这是不包括在本文的分析。门–漏电容是非线性的，依赖于栅极–漏电压[ 27 ]；它可以，因此，影响放大器的fiER性能如非线性输出电容。相比于晶体管的输出电容的栅极–漏电容通常是低；栅漏电容–LDMOS晶体管MRF21010，例如，约1 pF。在某些情况下，门的–漏电容的影响可以忽略；另一方面，由于E类开关模式放大器的fi二通常是高的驱动力，穿心相对强于预期的输出功率在低漏极电压。穿心的强烈影响的E类放大器的fi二直流电源调制
线性和必须考虑的低功率运行模式。从仿真结果和下面的测量结果，虽然，引线可为中等功率输出被忽视。漏EFfi性降解在这个范围内，主要是由晶体管输出电容引起的栅漏电容；–效果，因此，不包括。为
精确的分析，特别是在非常低的漏极电压，栅极–漏电容不可忽略的，在本实验的模拟和测量显示。