By the composition analysis, it was

By the composition analysis, it was confirmed that the migration of Pt into the center of the MoSi2 thin film was prevented. However, the quantity of Mo in the MoSi2 thin film near the Mo thin film and at the center of the MoSi2 thin film increased. This result is different from the stoichiometric composition ratio given by Mo:Si=1:2, and a marked increase in Mo content was observed. From the above results, it was found that Mo of the Mo buffer layer,instead of Pt, diffuses into the MoSi2 thin film. Thus, the decrease in the resistance is also explained by the diffusion

結果 (中文) 1:

通过成分分析，证实了Pt的MoSi2薄膜中心迁移的防止。然而，在附近的Mo薄膜的MoSi2薄膜在MoSi2薄膜中心钼量增加。这样的结果是不同的化学计量比组成：Mo Si = 1:2，和Mo含量明显增加，观察。从上面的结果，它被发现，钼的钼缓冲层，代替铂，扩散到MoSi2薄膜。因此，在电阻的降低也由扩散的解释

結果 (中文) 2:

由成分分析、 被证实的 Pt 迁移入中心的 MoSi2 薄膜被阻止。然而，MoSi2 薄膜中的钼的数量近 Mo 薄膜和中心的 MoSi2 薄膜增加。这一结果是不同的 Mo:Si 的化学计量学构成比例 = 1： 2 和 Mo 内容观察到有显著的增加。从上面的结果中，被发现 Mo Mo 缓冲层，而不是 Pt，散开成 MoSi2 薄膜。因此，在抵抗下跌也是通过传播解释