附件是我們進行Mask4的short loop結果。我們測試後，以此2

附件是我們進行Mask4的short loop結果。我們測試後，以此2片的結果較好。但是有一些金屬分離現象發生在電鍍條件8.3um的晶片上，這應該是光阻覆蓋不好造成，不過大致上結構是良好的。請確認是否繼續進行?

結果 (英文) 1:

Attached is the result of our short loop of Mask4.

After our test, this two good results. However, some separation occurred on the metal plating condition 8.3um wafer, which should be covered with a resist caused by bad, but the structure is generally good.

Please confirm whether to continue?

結果 (英文) 2:

The attachment is the short loop result of our Mask4.

After we tested, the results of this 2 pieces were better. However, there are some metal separation phenomenon occurred in the plating condition 8.3um chip, which should be caused by the light resistance coverage is not good, but the general structure is good.

Please confirm that you want to proceed?

結果 (英文) 3:

The attachment is the short loop result of Mask4.
After our test, the results of these two tablets are better. However, some metal separation phenomenon occurs on 8.3um wafer, which is caused by poor photoresist coverage, but the structure is generally good.
Are you sure you want to continue?