InstitutodeCienciadeMaterialesdeMadrid,CSIC,CantoblancoE28049Madrid,SpainWepresentatheoreticaldescriptionoftheelectronicpropertiesofgrapheneinthepresenceofdisorder,electron-electroninteractions,andparticle-holesymmetrybreaking.Weshowthatwhileparticle-holeasymmetry,long-rangeCoulombinteractions,andextendeddefectsleadtothephenomenonofself-doping,localdefectsdeterminethetransportandspectroscopicproperties.Ourresultsexplainrecentexperimentsingraphiticdevicesandpredictnewelectronicbehavior.