In this paper, we demonstrate an efficiency over 26% using alarge-area (180 cm2 designated area) c-Si solar cell with an IBCstructure combined with an a-Si/c-Si Si HJ, prepared by industriallyfeasible technologies.With this architecture, by integrating both P+and N+ HJ contacts to the rear side, it is possible to have good opticaland passivation properties at the front side of the cell,which receiveslight.We compare the high-efficiency technologies for Si solar cellsin the literature, and discuss the advantages of the technologies usedto prepare our record efficiency cell. Finally, a loss analysis pinpointsa path to approach the theoretical conversion efficiency limit,ofSi solar cells, 29.1%.