The comparison of the EQEmeas and E

The comparison of the EQEmeas and EQEtheo indicates that1.7% loss is coming from the wavelength range of 300nm to 900 nm,while another 1.7% loss is from 900 to 1,200 nm. Since thepenetration depth of light in most of the short wavelength range(300900 nm) is shorter than the thickness of the Si wafer, almost all J SC loss in this wavelength range can be related to the front surface of the HJ-IBC cell.

結果 (繁體中文) 1:

的EQEmeas和EQEtheo的比較表明，？1.7％的損失，從波長300nm的範圍至900nm的到來，而另一個？1.7％的損失是從900至1200納米。由於
光在最短的波長範圍（300〜900納米）比Si晶片的厚度短的穿透深度，幾乎都在此波長範圍內ĴSC損失可以被相關的HJ-IBC的前表面細胞。

結果 (繁體中文) 2:

EQEmeas 和 EQEtheo 的比較表明，1.7% 的損失來自 300nm 到 900 nm 的波長範圍，而另外 1.7% 的損失是從 900 到 1，200 nm。自
大多數短波長範圍（300900 nm）的光穿透深度都短于矽晶片的厚度，該波長範圍內幾乎所有的J SC損耗都與HJ-IBC電池的前表面有關。

結果 (繁體中文) 3:

The comparison of the EQemeas and EQetheo indicates That1.7%loss is coming from the wavelength range of 300nm to 900 nm，while another 1.7%loss is from 900 to 1200 nm.因為，因為
穿透光部在最短的距離（300900納米）比SI WAFER的想法還短，Almost all J SC loss in this wavelength range can be related to the front surface of the HJ-IBC cell.