To prevent the migration of Mo desc

To prevent the migration of Mo described in Section 3.2 into the MoSi2 thin film, heaters using Mo5Si3 or Mo3Si thin film were fabricated. The reason for using Mo5Si3 or Mo3Si thin film is that even if migration of Mo occurs, the composition of the heating area does not change very much. The Mo5Si3 and Mo3Si thin films were deposited using a target which was a mixture of Mo and MoSi2 powders. A high-purity alumina substrate with a thickness of 1.0 mm or a high-purity alumina crucible was used. The sputtering conditions were the same as those for MoSi2, and the discharge time was 2 hours. The thin films were analyzed by XRD and EDX. The conditions of analysis also were the same as for MoSi2. Heaters using these thin films deposited on the crucible were also fabricated under the same conditions as described in Section 2.2. The discharge time of the Mo5Si3 or Mo3Si thin film was 1 hour.

結果 (中文) 1:

为了防止莫在3.2节中描述的MoSi2薄膜迁移，或使用Mo5Si3 Mo3Si薄膜加热器的制备。使用Mo5Si3和Mo3Si薄膜的原因是，即使迁移钼时，加热区的成分不发生很大的变化。5Si3而言，Mo3Si薄膜沉积使用目标包括钼钼粉。采用了厚度为1毫米或高纯氧化铝坩埚高纯氧化铝衬底。溅射条件为那些对MoSi2相同，和放电时间为2小时。薄膜的XRD和EDX分析。分析的条件，也为MoSi2相同。使用这些薄膜沉积在坩埚加热器也在2.2节中描述的相同的条件下制备。的Mo5Si3或Mo3Si薄膜的放电时间为1小时。

結果 (中文) 2:

若要防止迁移的 Mo 到 MoSi2 薄膜在 3.2 节中所述，使用 Mo5Si3 或 Mo3Si 薄膜加热器被捏造。使用 Mo5Si3 或 Mo3Si 薄膜的原因是即使发生迁移的 Mo，组成的加热面积不会改变很多。Mo5Si3 和 Mo3Si 的薄膜被放置了使用的目标，即是 Mo 和 MoSi2 粉末的混合物。高纯氧化铝基板厚度为 1.0 m m 或高纯氧化铝坩埚使用了。溅射条件 MoSi2，相同，放电时间是 2 个小时。由 XRD 和 EDX 分析了薄膜材料。分析的条件也是 MoSi2 相同。使用这些薄膜上坩埚加热器是还捏造相同的条件下的第 2.2 条中所述。Mo5Si3 或 Mo3Si 薄膜，放电时间是 1 小时。