According to the above principles,

According to the above principles, choose the linear Hall element ugn3503 as magnetic change detection device.UGN3503 is made according to the principle of Hall effect measurements of magnetic fields of magnetic induction intensity. Here by Hall effect measurements of magnetic fields.
The Hall effect device as shown in the diagram. A semiconductor wafer is put in perpendicular to its magnetic field (b direction along the Z axis direction), when along the Y direction of the electrode a, a 'applied current I, wafer directional movement of the carrier (the average rate for U) by Lorentz force FB by,

結果 (中文) 1:

根据上述原则，选择线性霍尔元件 ugn3503 作为磁性变化检测设备。UGN3503 是根据霍尔效应测量磁场的磁感应强度的原则作出的。通过霍尔效应测量磁场的这里。霍尔效应装置如图所示。半导体晶圆片放在垂直于它的磁场 （b 方向沿 Z 轴方向），沿 Y 方向的电极时，应用的当前我，晶圆定向运动的载体 （U 的平均利率） 由洛仑兹力，FB

結果 (中文) 3:

根据上述原则，选择线性霍尔元件UGN3503作为磁场的变化检测device.ugn3503是根据磁感应强度的霍尔效应测量磁场的原理制成的。这里通过霍尔效应测量磁场。图中所示的霍尔效应装置。半导体晶片放在垂直于它的磁场（B方向沿z轴方向），当沿Y方向的电极，一个电流I，载流子的定向运动（U为晶片的平均率）由洛仑兹力FB的，