TFT在顯示器中的應用而受到了廣泛的關注並吸引了越來越多的研究興趣[1

TFT在顯示器中的應用而受到了廣泛的關注並吸引了越來越多的研究興趣[1]。尤其非晶銦鎵鋅氧化物（a-IGZO）薄膜晶體管（TFT）因其出色的性能而備受關注，包括高電子遷移率，出色的均勻性和穩定性，高的透光率以及較低的加工溫度和成本加工[4.13]。不過，迄今為止報導的大多數IGZO TFT必須由大電壓驅動，以實現高遷移率和高開/關電流比[4]。柵極絕緣體在獲得高性能TFT中扮演著重要作用[13]。SiO2已被用作常規TFT的柵極絕緣體。擁有高質量的界面態密度和更好的電絕緣性能[13]。不過SiO2作為低介電常數k的介電材料的TFT容易導致短溝道效應，與採用高k電介質的TFTs相比，使用SiO2作為介電材料的TFTs要求較高的驅動電壓才能達到相同的工作效率。降低驅動電壓的最簡單方法是減小柵極電介質層的厚度。

結果 (英文) 1:

TFT display of applications received widespread attention and attracted more and more research interest [1]. In particular, an amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) because of its excellent properties concern, including high electron mobility, excellent homogeneity and stability, high light transmittance and low the processing temperature and processing costs [4.13]. However, most IGZO TFT so far reported to be driven by a large voltage to achieve high mobility and high on / off current ratio [4]. A gate insulator plays an important role in obtaining a high-performance TFT in [13]. SiO2 has been used as a gate insulator of a conventional TFT. Has a high interface state density and better electrical insulating properties [13]. However, a TFT SiO2 dielectric material of low dielectric constant k easily lead to short channel effects, as compared to using high k dielectric TFTs, the TFTs using SiO2 as the dielectric material requires a higher driving voltages to achieve the same work effectiveness. The easiest way is to reduce the driving voltage reducing the gate dielectric thickness of the layer.

結果 (英文) 2:

The application of TFT in monitors has attracted wide attention and attracted more and more research interest. In particular, amorphous zinc oxide (a-IGZO) thin-film transistors (TFTs) are of particular concern due to their outstanding performance, including high electron migration, excellent uniformity and stability, high light transmission, and low processing temperature and cost processing. However, most of the IGZO TFTs reported so far must be driven by large voltages to achieve high migration rates and a high on/off current ratio. Gate insulators play an important role in obtaining high-performance TFTs. SiO2 has been used as a gate insulator for conventional TFT. High-quality interface density and better electrical insulation. However, SiO2 as a low dielectric constant k tFT easy to lead to short channel effect, compared with the use of high k dielectric TFTs, the use of SiO2 as a dielectric material TFTs require higher driving voltage to achieve the same efficiency. The easiest way to reduce the drive voltage is to reduce the thickness of the gate dielectric layer.

結果 (英文) 3:

The application of TFT in display has attracted extensive attention and attracted more and more research interests [1]. In particular, the amorphous ingaznoxide (a-IGZO) thin film transistor (TFT) has attracted much attention due to its excellent performance, including high electron mobility, excellent uniformity and stability, high transmittance, low processing temperature and cost [4.13]. However, most igzo TFTs reported so far have to be driven by high voltage to achieve high mobility and high on / off current ratio [4]. Gate insulator plays an important role in obtaining high performance TFT [13]. SiO2 has been used as gate insulator of conventional TFT. It has high-quality interface state density and better electrical insulation performance [13]. However, the TFT with SiO2 as a dielectric material with low dielectric constant k is easy to cause short channel effect. Compared with the TFTs with high dielectric K, the TFTs with SiO2 as a dielectric material requires higher driving voltage to achieve the same working efficiency. The simplest way to reduce the driving voltage is to reduce the thickness of the gate dielectric layer.