A 2-inch silicon wafer, as shown in

A 2-inch silicon wafer, as shown in Figure 1, is heated for one minute by a 10 W laser
that moves radially inwards and outwards, while the wafer rotates on its stage.
Assuming good thermal isolation from the environment, the only source of heat loss
is from the top surface via radiation to the processing chamber walls, which are
assumed to be at a fixed temperature of 20 °C.

結果 (中文) 1:

2 英寸硅外延片，如图 1 所示是一分钟激光加热下 10 W那移动径向向内和向外扩张，而硅片旋转的舞台上。假设好热隔离从环境、 热损失的唯一来源是从顶面通过辐射到加工室墙壁，是假定为在固定温度为 20 ° c。

結果 (中文) 3:

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