The NBE feature is attributable to

The NBE feature is attributable to the O 2p valence bandwhich is centered at 3.26 eV. Since the spectral feature ofthe D1 and D2 levels becomes obvious for the oxidative annealed ZnO:N samples at 700 and 800 °C, both deep levelsare probably the intrinsic nature of p-type ZnO:N films. Ingeneral, the DLOS spectrum increases monotonically withincident photon energy, because the amount of photocapacitance transients is proportional to the sum of charge-chargecontribution from optical active deep levels.22 Thus, the D2level is a discrete deep level with an optical threshold at2.14 eV, whereas the D1 level is potentially an efficientgeneration-recombination center with a strong interactionwith both the conduction and the valence bands.20 As theillumination energy is increased above the threshold energyof 1.23 up to 1.77 eV, the steady state photocapacitance decreases correspondingly, indicating that the hole transitionfrom the D1 level to the valence band is the dominant process. Sequentially, the positive photocapacitance transientsobserved at photon energies above 1.77 eV are due to theelectron transition from the D1 level to the conduction band.More importantly, we can also observe an acceptor stateemission at 3.01 eV near the NBE transitions, as typicallyseen for the oxidative annealed ZnO:N sample at 700 °C.This energy level can probably be assigned to N atoms thatreside at O-lattice sites in ZnO, i.e., N acceptors
NO. TheNO concentration increases significantly by the oxidative annealing at 700 and 800 °C

結果 (繁體中文) 1:

The NBE feature is attributable to the O 2p valence band
which is centered at 3.26 eV. Since the spectral feature of
the D1 and D2 levels becomes obvious for the oxidative annealed ZnO:N samples at 700 and 800 °C, both deep levels
are probably the intrinsic nature of p-type ZnO:N films. In
general, the DLOS spectrum increases monotonically with
incident photon energy, because the amount of photocapacitance transients is proportional to the sum of charge-charge
contribution from optical active deep levels.22 Thus, the D2
level is a discrete deep level with an optical threshold at
2.14 eV, whereas the D1 level is potentially an efficient
generation-recombination center with a strong interaction
with both the conduction and the valence bands.20 As the
illumination energy is increased above the threshold energy
of 1.23 up to 1.77 eV, the steady state photocapacitance decreases correspondingly, indicating that the hole transition
from the D1 level to the valence band is the dominant process. Sequentially, the positive photocapacitance transients
observed at photon energies above 1.77 eV are due to the
electron transition from the D1 level to the conduction band.
More importantly, we can also observe an acceptor state
emission at 3.01 eV near the NBE transitions, as typically
seen for the oxidative annealed ZnO:N sample at 700 °C.
This energy level can probably be assigned to N atoms that
駐留在氧化鋅，即N受體O點陣網站？NO。的
在700和800℃顯著NO濃度的增加通過氧化退火

結果 (繁體中文) 2:

NBE 特徵可歸因於 O 2p 價帶
以 3.26 eV 為中心。由於光譜特徵
在 700 和 800 °C 的氧化退火 ZnO：N 樣品中，D1 和 D2 水準變得明顯，這兩種樣品都是深層
可能是 p 型 ZnO：N 薄膜的內在特性。在
一般說來，DLOS 頻譜單調地增加
失光子能量，因為光電容瞬變數與電荷總和成正比
光學有源深度的貢獻。
電平是一個離散的深層電平，其光學閾值
2.14 eV，而 D1 級別可能是一個高效的
生成重組中心，具有強大的交互力
傳導和價帶。
照明能量高於閾值能量
1.23 至 1.77 eV，穩態光動度相應降低，表明孔過渡
從D1水準到價帶是主導過程。按順序，正光電位瞬變
在高於1.77 eV的光子能量觀測到是由於
電子從D1電平過渡到傳導帶。
更重要的是，我們還可以觀察接受者狀態
在 NBE 轉換附近 3.01 eV 下排放，這通常
在700°C處看到的氧化退火ZnO：N樣品。
這個能量水準可能分配給N個原子，
位於 ZnO 的 O-晶格網站，即 N 接受者 NO。的
在 700 和 800 °C 處氧化退火時，無濃度顯著增加

結果 (繁體中文) 3:

NBE的特徵歸因於o2價帶
以3.26電動汽車為中心。因為
在700和800℃下，氧化退火的ZnO:N樣品的D1和D2水准變得明顯，都是深能級
可能是p型ZnO:N薄膜的本征性質。在
一般來說，DLOS頻譜隨著
入射光子能量，因為光電容瞬變數與電荷之和成正比
光學活性深能級的貢獻。22囙此，D2
能級是一個離散的深能級，其光學閾值為
2.14 eV，而D1水准可能是有效的
强相互作用的生成複合中心
同時具有導帶和價帶
照明能量新增到閾值能量以上
在1.23到1.77ev之間，穩態光電電容相應地降低，表明空穴躍遷
從D1水准到價帶是主導過程。囙此，正光電容瞬變
在1.77eV以上的光子能量下觀察到的是由於
從D1能級到導帶的電子躍遷。
更重要的是，我們還可以觀察到受體狀態
NBE躍遷附近3.01ev的輻射
在700℃下氧化退火的ZnO:N樣品可見。
這個能級可能被分配給
位於氧化鋅中的O晶格位置，即N個受體NO
700和800℃下的氧化退火顯著增加了NO濃度